Phase change memory cell

ABSTRACT

A phase change memory cell is disclosed, including a first electrode and a second electrode, and a plurality of recording layers disposed between the first and second electrodes. The phase of an active region of each of the recording layers can be changed to a crystalline state or an amorphous state by current pulse control and hence respectively has crystalline resistance or amorphous resistance. At least two of the recording layers have different dimensions such that different combinations of the crystalline and amorphous resistance result in at least three different effective resistance values between the first and second electrodes. The phase change memory cell can be realized with the same material of the recording layers and thus can be fabricated with simple and currently developed CMOS fabrication process technologies. Furthermore, the phase change memory is easy to control due to large current programming intervals.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The invention relates to a phase change memory, and in particular to a multilevel phase change memory.

2. Description of the Related Art

Phase change memories with competitive advantages of speed, low power consumption, high capacity, CMOS fabrication process compatibility and low costs, are suitable for use as high density stand-alone or embedded memories. Phase change memories are thus considered to have potentiality to replace currently commercial and competitive volatile memories such as SRAM and DRAM and non-volatile memories such as Flash. Bottlenecks in development of phase change memory mainly result from high writing current of the memory elements, since high writing current dictates increased area of connected driving transistors, leading to large memory cell area and low memory density. One method of increasing the phase change memory density is to decrease contact area between heater electrode and phase change recording layer so that the writing current can be reduced. However, this method is restricted by lithography and fabrication process technologies and thus harder to be implemented. Another method develops multilevel phase change memories with the same memory cells. However, this makes it difficult to control programming current and complicate process integration of various materials.

Multilevel phase change memories are proposed by Ovonyx in Elec_Memory_Research_Report in 1999, as shown in FIG. 1, by the relationship of memory state with writing current interval. Lateral axis represents writing current and vertical axis represents cell resistance resulting from the corresponding writing current. Different values of cell resistance are representative of different memory states. While an advantage of the multilevel operation can increase memory states, current programming intervals (1.42-1.51-1.51, 1.51-1.60, . . . , and 2.73-2.82 mA) corresponding to different memory states (or cell resistance) are extremely small and thus difficult to define and control, resulting in data storage errors. Additionally, resistance uniformity of respective states in different memory cells cannot be controlled precisely due to the possible deviation of fabrication process.

Japanese Matsushita Electronics Cooperation discloses another multilevel memory cell having various recording materials in U.S. Pat. No. 6,809,401. FIG. 2 is a cross section of a multilevel memory cell 200 disclosed therein. As shown, the multilevel phase change memory cell 200 comprises a substrate 21, a bottom electrode 22 and a top electrode 23, first to Nth recording layers 24 ₁-24 _(N) of different materials, and first to (N-1)th interlayers 25 ₁-25 _(N-1) respectively disposed between two adjacent recording layers 24 ₁-24 _(N). Although the multilevel phase change memory cell 200 provides multilevel operation, different properties of the recording layers 24 ₁-24 _(N) of different materials result in high control difficulty and fabrication process complexity.

Accordingly, a multilevel phase change memory cell having larger current programming intervals, recording layers of the same materials and simple fabrication process is called for.

BRIEF SUMMARY OF THE INVENTION

The invention provides a phase change memory cell providing multilevel operation to increase memory density, is realized using the same phase change material. The phase change memory cell also has large current programming intervals. Moreover, the phase change memory can be fabricated utilizing currently developed CMOS fabrication process technologies.

The invention provides a phase change memory cell comprising a first electrode and a second electrode, and a plurality of recording layers disposed between the first and second electrodes. The phase of an active region of each of the recording layers can be reversibly changed between crystalline and amorphous state which is determined by current pulse and hence respectively has crystalline resistance or amorphous resistance. At least two of the recording layers have different dimensions such as cross-sectional area and/or thickness so that different combinations of the crystalline and amorphous resistance result in at least three different effective resistance values between the first and second electrodes.

The invention provides another phase change memory cell comprising a first electrode and a second electrode, a plurality of recording layers disposed between the first and second electrodes, and a plurality of heating plugs each disposed between two of the recording layers or between one of the recording layers and one of the first and second electrodes. The phase of an active region of each of the recording layers can be reversibly changed between crystalline and amorphous state which is determined by current pulse and hence respectively has crystalline resistance or amorphous resistance. At least two of the contact areas between the recording layers and the heating plugs are different so that different combinations of the crystalline and amorphous resistance result in at least three different effective resistance values between the first and second electrodes.

The invention provides another phase change memory cell comprising a first electrode and a second electrode, a plurality of recording layers disposed between the first and second electrodes, a plurality of heating plugs each disposed between two of the recording layers or between one of the recording layers and one of the first and second electrodes, and at least one interlayer each connected between one of the recording layers and one of the heating plugs. The phase of an active region of each of the recording layers can be reversibly changed between crystalline and amorphous state which is determined by current pulse and hence respectively has crystalline resistance or amorphous resistance. The interlayer is disposed such that different combinations of the crystalline and amorphous resistance result in at least three different effective resistance values between the first and second electrodes.

In the phase change memory cells of the invention, the recording layers can be of the same material. Accordingly, properties of only one material need to be considered, and the fabrication process is thus very simple and can be realized by currently developed CMOS fabrication process technologies. Additionally, current programming intervals are larger and programming control in different memory states can thus be performed readily.

BRIEF DESCRIPTION OF THE DRAWINGS

The invention can be more fully understood by reading the subsequent detailed description and examples with references made to the accompanying drawings, wherein:

FIG. 1 shows the relationship between memory state and programming current interval in a conventional phase change memory cell;

FIG. 2 is a cross section of another conventional multilevel memory cell;

FIG. 3 is a cross section of a phase change memory cell in accordance with an embodiment of the invention;

FIG. 4 shows the relationship between reset current and top-view area of a phase change recording layer;

FIG. 5 shows respective programming curves for the first and second recording layers of FIG. 3, illustrating the relationship between resistance values and writing current.;

FIG. 6 shows programming curves for the phase change memory cell of FIG. 3, illustrating the relationship between resistance values and writing current;

FIGS. 7A and 7B are relational tables of written states to writing current in accordance with two embodiments of the invention;

FIG. 8 is a cross section of a phase change memory cell in accordance with another embodiment of the invention;

FIG. 9 shows relationship between reset current and thickness of a phase change recording layer;

FIG. 10 shows respective programming curves for first and second recording layers of FIG. 8, illustrating the relationship between resistance values and writing current;

FIG. 11 shows programming curves for phase change memory cell of FIG. 8, illustrating the relationship between resistance values and writing current;

FIG. 12 is a cross section of a phase change memory cell in accordance with another embodiment of the invention;

FIG. 13 shows relationship between reset current and contact area between heating plug and phase change recording layer;

FIG. 14 shows respective programming curves for first and second recording layers in FIG. 12, illustrating the relationship between resistance values and writing current;

FIG. 15 shows programming curves for the phase change memory cell of FIG. 12, illustrating the relationship between resistance values and writing current;

FIG. 16 is a cross section of a phase change memory cell in accordance with another embodiment of the invention;

FIG. 17 shows respective programming curves for first and second recording layers in FIG. 16, illustrating the relationship between resistance values and writing current;

FIG. 18 shows programming curves for the phase change memory cell of FIG. 16, illustrating the relationship between resistance values and writing current;

FIG. 19 is a cross section of a phase change memory cell in accordance with another embodiment of the invention;

FIG. 20 is a cross section of a phase change memory cell in accordance with another embodiment of the invention;

FIG. 21 is a cross section of a phase change memory cell in accordance with another embodiment of the invention; and

FIG. 22 is a cross section of a phase change memory cell in accordance with another embodiment of the invention.

DETAILED DESCRIPTION OF THE INVENTION

FIG. 3 is a cross section of a phase change memory cell 300 in accordance with an embodiment of the invention. As shown, the phase change memory cell 300 comprises a first electrode 31 ₁ and a second electrode 31 ₂ such as a single metallic or alloy layer of Al, Au, Ag, Cu, Pt, Ti and W or other metallic compounds. Additionally, between the first and second electrode 31 ₁ and 31 ₂, from bottom to top, are disposed a first heating plug 33 ₁, a first recording layer 32 ₁, a first blocking layer 34 ₁, a second heating plug 33 ₂, a second recording layer 32 ₂ and a second blocking layer 34 ₂.

The first and second blocking layers 34 ₁ and 34 ₂ are, for example, single metallic or alloy layers of Al, Au, Ag, Cu, Pt, Ti and W or other metallic compounds, respectively blocking diffusion of atoms between the first recording layer 32 ₁ and second heating plug 33 ₂, and between the second recording layer 32 ₂ and second electrode 31 ₂. However, it is noted that when the materials of the first recording layer 32 ₁ and second heating plug 33 ₂ are chosen such that atoms therein will not diffuse to each other, the disposing of the first blocking layer 34 ₁ is dispensable. Similarly, when the materials of the second recording layer 32 ₂ and second electrode 31 ₂ are chosen such that atoms therein will not diffuse to each other, the disposing of the second block layer 34 ₂ is dispensable.

The materials of the first and second recording layers 32 ₁ and 32 ₂ are selected such that their phases of respective active regions therein can be reversible between crystalline and amorphous states when they receive corresponding electronic energy to cause temperature rising via Joule heating, resulting in a resistance transition between a lower value of the crystalline state and a higher value of the amorphous state. The materials of the first and second recording layers 32 ₁ and 32 ₂ can be S-based, Se-based or Sb-based alloy, for example, binary alloy such as GaSb, In Sb, InSe, Sb₂Te3 and GeTe, ternary alloy such as Ge₂Sb₂T₅, InSbTe, GaSeTe, SnSbTe₄ and InSbGe, or quaternary alloy such as AgInSbTe, (Ge, Sn)SbTe, GeSb(SeTe) and Te₈₁Ge₁₅Sb₂S₂.

As shown in FIG. 3, the top-view areas of the first and second recording layers 32 ₁ and 32 ₂ in the memory cell 300 are different and respectively denoted as PA1 and PA2, while the materials of the same can be the same or different. The different top-view areas of the first and second recording layers 32 ₁ and 32 ₂, for example, can be realized as different top-view diameters or edge lengths of the same. The embodiment shown comprises PA2 larger than PA1, but PA2 can also be smaller than PA1. In addition, the materials of the first and second recording layers 32 ₁ and 32 ₂ are the same in the embodiment to simplify the description.

FIG. 4 shows relationship between reset current and the top-view areas of a phase change recording layer proposed by Samsung corporation in IEDM 2003, illustrating programming mechanism of the phase change memory cell 300 of the invention, wherein the reset current is one to transfer the phase change material from crystalline state to amorphous state. As shown, phase change recording layers with different top-view areas have different magnitudes of reset currents. It can thus be seen that, even though the first and second recording layers 32 ₁ and 32 ₂ are the same material and fed with the same writing current, the active regions thereof can have different phases. As such, different information can be recorded using different effective resistance values generated by different phase combinations. This is achieved by adopting the adequate top-view areas for the first and second recording layers 32 ₁ and 32 ₂ so that different phase combinations are distinguishable, for example, by measuring the effective resistance value between the first and second electrodes 31 ₁ and 31 ₂.

FIG. 5 shows respective programming curves for the first and second recording layers 32 ₁ and 32 ₂ of FIG. 3, illustrating the relationship between resistance values and writing current. The lateral axis represents the writing current through the first or second recording layer 32 ₁ or 32 ₂ and the vertical axis represents the resulting resistance value of the same. The initial phase at the beginning of a write operation is determined by the previous writing state. In the figure, curves GST1 ₁ and GST1 ₂ respectively represent programming curves of the first recording layers 32 ₁ with the initial phase in crystalline and amorphous states, and curves GST2 ₁ and GST2 ₂ respectively represent programming curves of the second recording layers 32 ₂ with the initial phase in crystalline and amorphous states. The discussion is now made for the first recording layer 32 ₁ first. If the first recording layer 32 ₁ is initially in a crystalline state, as shown by the curve GST1 ₁, when the writing current falls below I₃, the first recording layer 32 ₁ stays in the crystalline state and thus has a crystalline resistance value R_(L1), however, when the writing current exceeds I₃, the active region of the first recording layer 32 ₁ melts by Joule heating and then cools immediately to change to amorphous state and the first recording layer 32 ₁ thus has an amorphous resistance value R_(H1). Conversely, if the first recording layer 32 ₁ is initially in an amorphous state, as shown by the curve GST1 ₂, when the writing current falls below I₁, since the thermal energy is insufficient to change the phase of the first recording layer 32 ₁, the first recording layer 32 ₁ stays in the amorphous state and thus has the amorphous resistance value R_(H1); when the writing current falls beyond I₁ but below I₃, since the temperature of the active region of the first recording layer 32 ₁ increases beyond the crystallization temperature by Joule heating, the active region goes through a nucleation and growth process to reach a crystalline state and thus has the crystalline resistance value R_(L1); when the writing current is further increased to exceed I₃, the active region melts by Joule heating and then cools down immediately once more, consequently returning to the amorphous state and thus having the amorphous resistance value R_(H1). The current I₃ is thus referred to as a reset current of the first recording layer 32 ₁.

The second recording layer 32 ₂ undergoes similar transition process. If the second recording layer 32 ₂ is in a crystalline state initially, as shown by the curve GST2 ₁, when the writing current falls below I₄, the second recording layer 32 ₂ stays in the crystalline state and thus has a crystalline resistance value R_(L2); however, when the writing current exceeds I₄, the active region of the second recording layer 32 ₂ transits from the crystalline state to an amorphous state and thus has an amorphous resistance value R_(H2). Conversely, if the second recording layer 32 ₂ is initially in an amorphous state, as shown by the curve GST2 ₂, when the writing current falls below I₂, since the thermal energy is insufficient to change the crystal structure of the second recording layer 32 ₂, the second recording layer 32 ₂ stays in the amorphous state and thus has the amorphous resistance value R_(H2); when the writing current falls beyond I2 but below I₄, since the temperature of the active region of the second recording layer 32 ₂ increases beyond the crystallization temperature by Joule heating, the active region goes through a nucleation and growth process to reach a crystalline state and thus has the crystalline resistance value R_(L2); when the writing current is further increased to exceed I₄, the active region melts by Joule heating and then cools immediately once more, consequently returning to the amorphous state and thus having the amorphous resistance value R_(H2). The current I₄ is thus referred to as a reset current of the second recording layer 32 ₂.

As shown in FIG. 4, because the top-view area of the first recording layer 32 ₁ is smaller than that of the second recording layer 32 ₂, the reset current I₃ of the first recording layer 32 ₁ is lower than the reset current I₄ of the second recording layer 32 ₂.

FIG. 6 shows programming curves for the phase change memory cell 300 of FIG. 3, illustrating the relationship between resistance values and writing current. The lateral axis represents the writing current from the first recording layer 32 ₁ to the second recording layer 32 ₂ and the vertical axis represents the resulting effective resistance value between the first and second electrodes 31 ₁ and 31 ₂, which is substantially equal to series resistance of the first and second recording layers 32 ₁ and 32 ₂. Different programming curves correspond to different initial phase combinations of the first and second recording layers 32 ₁ and 32 ₂ dependent upon the previous writing state. In the figure, curves GST_1, GST_2 and GST_3 are respectively programming curves with the first and second recording layers 32 ₁ and 32 ₂ both in crystalline state (denoted as state 0), respectively in amorphous and crystalline states (denoted as state 1) and both in amorphous state (denoted as state 2) after the previous writing operation.

As shown in FIG. 6, programming curves GST_1-GST_3 differ greatly for the current below I₂ due to different initial states, so programming current below I₂ is not adequate to be used in write operations. Conversely, programming curves GST_1-GST_3 are almost the same for the current beyond I₂, that is, the effective resistance values are undistinguishable even with different initial states. For this reason, current beyond I₂ can be used in write operation. As shown, when the writing current is between I₂ and I₃, between I₃ and I₄, and beyond I₄, the phase change memory cell 300 is respectively in state 0, state 1, and state 2, having a corresponding resistance value R(0)=R_(L1)+R_(L2), R(1)=R_(H1)+R_(L2), and R(2)=R_(H1)+R_(H2).

Accordingly, write operations are performed on the phase change memory cell 300 by feeding writing current through the first and second recording layers 32 ₁ and 32 ₂, wherein the magnitude of the writing current is determined according to which of the states 0-2 is to be written.

FIG. 7A is a relational table of written states to writing current in accordance with a first embodiment of the invention. When a writing operating is performed to achieve state 0, 1 or 2, the writing current I is respectively I₂<I<I₃, I₃<I<I₄ and I₄<I.

FIG. 7B is a relational table of written states to writing current in accordance with a second embodiment of the invention, differing from the first embodiment only in that, during any write operation, a first-stage write operation is first performed using a reset current between I₂ and I₃ to reset the cell to state 0, and a second-stage operation is then performed using a writing current dependent on the state to be written. The second stage operation is similar to the first embodiment, differing in that when the state 0 is to be written, the writing current can be lower than 13 because the cell has been reset to state 0 regardless of the initial state. The second embodiment ensures the accuracy of the written data while consuming longer writing time than the first embodiment.

When a read operation is performed on the phase change memory cell 300 to determine the data stored therein, reading current is fed through the first and second recording layer 32 ₁ and 32 ₂ and the resistance value between the first and second electrodes 31 ₁ and 31 ₂ is measured. The magnitude of the reading current is kept low enough not to change the phase of the recording layers. When the resistance value is R(0)=R_(L1)+R_(L2), R(1)=R_(H1)+R_(L2), and R(2)=R_(H1)+R_(H2), the phase change memory cell 300 stores respectively state 0, state 1 and state 2.

FIG. 8 is a cross section of a phase change memory cell 800 in accordance with another embodiment of the invention, differing from the phase change memory cell 300 only in that the first recording layer 82 ₁ and the second recording layer 82 ₂ have different thicknesses (respectively denoted as PT1 and PT2) while having the same the top-view areas (that is, the diameters or edge lengths under a top-view of recording layers 82 ₁ and 82 ₂ in the memory cell 800). Reference numbers 84 ₁ and 84 ₂ respectively represent first and second blocking layers. The embodiment shown comprises PT1 larger than PT2, but PT1 can also be smaller than PT2. Similarly, the materials-of the first and second recording layers 82 ₁ and 82 ₂ can be the same or different. The embodiment uses the former to simplify the description.

FIG. 9 shows relationship of reset current with the thickness of a phase change material proposed by Samsung corporation in IEDM 2003, illustrating programming mechanism of the phase change memory cell 800 of the invention. As shown, phase change materials with different thicknesses have different magnitudes of reset current. Thus, even though the first and second recording layers 82 ₁ and 82 ₂ are the same material and fed with the same writing current, the active regions of them can have different phases.

FIG. 10 shows respective programming curves for the first and second recording layers 82 ₁ and 82 ₂ of FIG. 8, illustrating the relationship between resistance values and writing current. In the figure, curves GST1 ₁ and GST1 ₂ respectively represent programming curves of the first recording layers 82 ₁ with the initial phase in crystalline and amorphous states, and curves GST2 ₁ and GST2 ₂ respectively represent programming curves of the second recording layers 82 ₂ with the initial phase in crystalline and amorphous states. As shown, the first and second recording layers 82 ₁ and 82 ₂ have resistance values R_(L1) and R_(L2) respectively in crystalline state and R_(H1) and R_(H2) respectively in amorphous state. As shown in FIG. 9, because the thickness of the first recording layer 82 ₁ is higher than that of the second recording layer 82 ₂, the reset current I₃ of the first recording layer 82 ₁ is lower than the reset current I₄ of the second recording layer 82 ₂. The figure is similar to FIG. 5 and the description is thus omitted for brevity.

FIG. 11 shows programming curves for the phase change memory cell 800 of FIG. 8, illustrating the relationship between resistance values and writing current. In the figure, curves GST_1, GST_2 and GST_3 are respectively programming curves with the first and second recording layers 82 ₁ and 82 ₂ both in crystalline state (denoted as state 0), respectively in amorphous and crystalline states (denoted as state 1) and both in amorphous state (denoted as state 2) after the previous writing operation. As shown, writing currents in intervals between I₂ and I₃, between I₃ and I₄, and beyond I₄ correspond respectively to diverse resistance values R(0)=R_(L1)+R_(L2), R(1)=R_(H1)+R_(L2), and R(2)=R_(H1)+R_(H2). The figure is similar to FIG. 6 and the description is thus omitted for brevity.

Accordingly, write operation is performed on the phase change memory cell 800 by feeding writing current through the first and second recording layers 82 ₁ and 82 ₂, wherein the magnitude of the writing current is determined according to which of the states 0-2 is to be written. Embodiments of writing currents corresponding to written states can also be referenced in FIGS. 7A and 7B. Similarly, when a read operation is performed on the phase change memory cell 800 to determine the data stored therein, reading current of appropriate magnitude is fed through the first and second recording layer 82 ₁ and 82 ₂ and the resistance value between the first and second electrodes 31 ₁ and 31 ₂ is measured.

It is noted that, the embodiments shown in FIGS. 3 and 8 respectively, the first and second recording layers have different top-view areas and thicknesses. The two embodiments, however, can be combined. That is, the first and second recording layers differ in not only top-view area but also thickness. In summary, the first and second recording layers have different “dimensions” such that different combinations of the crystalline and amorphous resistance are generated with different writing currents.

FIG. 12 is a cross section of a phase change memory cell 1200 in accordance with another embodiment of the invention, differing from the phase change memory cell 300 only in that the first recording layer 122 ₁ and the second recording layer 122 ₂ have the same dimensions (in both thicknesses and top-view areas). Furthermore, the contact area between the first heating plug 123 ₁ and the first recording layer 122 ₁ (denoted as VA1) and the contact area between the second heating plug 123 ₂ and the second recording layer 122 ₂ (denoted as VA2) are different. Reference numbers 124 ₁ and 124 ₂ respectively represent first and second blocking layers. The embodiment shown comprises VA1 smaller than VA2, but VA1 can also be larger than VA2.

FIG. 13 shows relationship between reset current and the contact area of heating plugs of a phase change material proposed by Samsung corporation in IEDM 2003, illustrating programming mechanism of the phase change memory cell 1200 of the invention. As shown, phase change materials with different contact areas of heating plugs have different magnitudes of reset current. Thus, even though the first and second recording layers 122 ₁ and 122 ₂ are the same material and fed with the same writing current, the active regions thereof can have different phases.

FIG. 14 shows respective programming curves for the first and second recording layers 122 ₁ and 122 ₂ of FIG. 12, illustrating the relationship between resistance values and writing current. In the figure, curves GST1 ₁ and GST1 ₂ respectively represent programming curves of the first recording layers 122 ₁ with the initial phase in crystalline and amorphous states, and curves GST2 ₁ and GST2 ₂ respectively represent programming curves of the second recording layers 122 ₂ with the initial phase in crystalline and amorphous states. As shown, the first and second recording layers 122 ₁ and 122 ₂ have resistance values R_(L1) and R_(L2) respectively in crystalline state and R_(H1) and R_(H2) respectively in amorphous state. As shown in FIG. 13, because VA1 is smaller than VA2, the reset current I₃ of the first recording layer 122 ₁ is lower than the reset current I₄ of the second recording layer 122 ₂. The figure is similar to FIG. 5 and the description is thus omitted for brevity.

FIG. 15 shows programming curves for the phase change memory cell 1200 of FIG. 12, illustrating the relationship between resistance values and writing current. In the figure, curves GST_1, GST_2 and GST_3 are respectively programming curves with the first and second recording layers 122 ₁ and 122 ₂ both in crystalline state (denoted as state 0), respectively in amorphous and crystalline states (denoted as state 1) and both in amorphous state (denoted as state 2) after the previous writing operation. As shown, writing currents in intervals between I₂ and I₃, between I₃ and I₄, and beyond I₄ correspond respectively to diverse resistance values R(0)=R_(L1)+R_(L2), R(1)=R_(H1)+R_(L2), and R(2)=R_(H1)+R_(H2). The figure is similar to FIG. 6 and the description is thus omitted for brevity.

Accordingly, write operation is performed on the phase change memory cell 1200 by feeding writing current through the first and second recording layers 122 ₁ and 122 ₂, wherein the magnitude of the writing current is determined according to which of the states 0-2 is to be written. Embodiments of writing currents corresponding to written states can also be referenced in FIGS. 7A and 7B. Similarly, when a read operation is performed on the phase change memory cell 1200 to determine the data stored therein, reading current of appropriate magnitude is fed through the first and second recording layer 122 ₁ and 122 ₂ and the resistance value between the first and second electrodes 31 ₁ and 31 ₂ is measured.

FIG. 16 is a cross section of a phase change memory cell 1600 in accordance with another embodiment of the invention, differing from the phase change memory cell 300 only in that the first recording layer 162 ₁ and the second recording layer 162 ₂ have the same dimensions (in both thicknesses and top-view areas). Furthermore, an interlayer 161 is inserted between the first heating plug 33 ₁ and the first recording layer 162 ₁. Preferably, the material of the interlayer 161 is metal, semimetal or semiconductor with low thermal conductivity and high resistivity, such as TiN, TiAlN, TiW and SiC, to improve heating effect of writing current on the first recording layer 162 ₁. Reference numbers 164 ₁ and 164 ₂ respectively represent first and second blocking layers. The embodiment shown comprises the interlayer 161 disposed between the first heating plug 33 ₁ and the first recording layer 162 ₁, but the interlayer 161 can also be disposed between the second heating plug 33 ₂ and the second recording layer 162 ₂. Additionally, the interlayer 161 is not required to cover the entire bottom surface of the first recording layer 162 ₁, only to cover a partial area of the contact area of the first recording layer 162 ₁ with the first heating plug 33 ₁.

FIG. 17 shows respective programming curves for the first and second recording layers 162 ₁ and 162 ₂ of FIG. 16, illustrating the relationship between resistance values and writing current. In the figure, curves GST1 ₁ and GST1 ₂ respectively represent programming curves of the first recording layers 162 ₁ with the initial phase in crystalline and amorphous states, and curves GST2 ₁ and GST2 ₂ respectively represent programming curves of the second recording layers 162 ₂ with the initial phase in crystalline and amorphous states. As shown, the first and second recording layers 162 ₁ and 162 ₂ have resistance values R_(L1) and R_(L2) respectively in crystalline states and R_(H1) and R_(H2) respectively in amorphous states. Because the first recording layer 162 ₁ is close to the interlayer 161, the heating effect of the writing current on the first recording layer 162 ₁ is thus better than that on the second recording layer 162 ₂, and the temperature increase of an active area of the first recording layer 162 ₁ accordingly exceeds that of the second recording layer 162 ₂, the reset current I₃ of the first recording layer 162 ₁ is lower than the reset current I₄ of the second recording layer 162 ₂. The figure is similar to FIG. 5 and the description is thus omitted for brevity.

FIG. 18 shows programming curves for the phase change memory cell 1600 of FIG. 16, illustrating the relationship between resistance values and writing current. In the figure, curves GST_1, GST_2 and GST_3 are respectively programming curves with the first and second recording layers 162 ₁ and 162 ₂ both in crystalline state (denoted as state 0), respectively in amorphous and crystalline states (denoted as state 1) and both in amorphous state (denoted as state 2) after the previous writing operation. As shown, writing currents in intervals between I₂ and I₃, between I₃ and I₄, and beyond I₄ correspond respectively to diverse resistance values R(0)=R_(L1)+R_(L2), R(1)=R_(H1)+R_(L2), and R(2)=R_(H1)+R_(H2). The figure is similar to FIG. 6 and the description is thus omitted for brevity.

Accordingly, write operation is performed on the phase change memory cell 1600 by feeding writing current through the first and second recording layers 162 ₁ and 162 ₂, wherein the magnitude of the writing current is determined according to which of the states 0-2 is to be written. Embodiments of writing currents corresponding to written states can also be referenced in FIGS. 7A and 7B. Similarly, when a read operation is performed on the phase change memory cell 1600 to determine the data stored therein, reading current of appropriate magnitude is fed through the first and second recording layer 162 ₁ and 162 ₂ and the resistance value between the first and second electrodes 31 ₁ and 31 ₂ is measured.

The first and second recording layers are connected in series in FIGS. 3, 8, 12 and 16. The invention, however, is not limited thereto, and the first and second recording layers can be connected in parallel as shown in FIGS. 19, 20, 21 and 22. As such, resistance corresponding to states 0 to 2 are respectively R(0)=(R_(L1)·R_(L2))/(R_(L1)+R_(L2)), R(1)=(R_(H1)·R_(L2))/(R_(H1)+R_(L2)), and R(2)=(R_(H1)·R_(H2))/(R_(H1)+R_(H2)). Similarly, when a write operation is performed, the magnitude of the writing current is determined according to which of the states 0-2 is to be written. When a read operation is performed to determine the stored state, a reading current of appropriate magnitude is fed through the first and second recording layer 162 ₁ and 162 ₂ and the resistance value between the first and second electrodes 31 ₁ and 31 ₂ is measured.

It is noted that the embodiments can be combined as required. For example, in an embodiment, the first and second recording layers differ not only in dimensions, but also in the contact areas respectively with the first and second heating plugs. Additionally, although the embodiments all have two recording layers and provide three-level operations, the phase change memory cell of the invention can be realized with more than two recording layers and/or provision of more-than-three level operation. When a phase change memory cell has more than three recording layers, the recording layers are not required to have only a series or parallel connection, but can have combinations of series and parallel connections, such as one recording layer connected in parallel with other two recording layers connected in series.

The invention increases memory cell density since not only multilevel operation is achieved but also recording layers can be stacked perpendicularly between the first and second electrode thereby not occupying excess area. Furthermore, the invention can be implemented with a single phase change material of the recording layers, so fabrication process is simpler and process compatibility is better than in the conventional phase change memories implemented with various phase change materials. The invention can be realized by currently developed semiconductor fabrication process technologies. Furthermore, the invention has better controllability in multilevel operation, since programming current can be readily adjusted through structural parameters of recording layers, heating plugs and interlayer(s), operation characteristics of only one recording layer can be considered, and operation between different states is easily controlled due to sufficiently large current programming intervals corresponding to different states.

While the invention has been described by way of example and in terms of preferred embodiment, it is to be understood that the invention is not limited thereto. To the contrary, it is intended to cover various modifications and similar arrangements (as would be apparent to those skilled in the art). Therefore, the scope of the appended claims should be accorded the broadest interpretation so as to encompass all such modifications and similar arrangements. 

1. A phase change memory cell, comprising: a first electrode and a second electrode, wherein the first electrode is a single metallic or alloy layer or a metallic compound; a first recording layer disposed between the first and second electrodes; a second recording layer disposed between the first and second electrodes and over the first recording layer; a first heating plug disposed between the first recording layer and the first electrode and contacting the first recording layer; and a second heating plug disposed between the first recording layer and the second recording layer and contacting the second recording layer, wherein: the second heating plug has a total top-view area smaller than a total top-view area of the second recording layer; the first heating plug and the second heating plug allow flowing a programming current through the first recording layer and the second recording layer; and a total contact area between the first heating plug and the first recording layer is smaller than a total contact area between the second heating plug and the second recording layer, wherein the total contact area between the first heating plug and the first recording layer is a portion of a bottom surface of the first recording layer.
 2. The phase change memory cell of claim 1, wherein the recording layers are formed of the same material.
 3. The phase change memory cell of claim 1, further comprising: a first blocking layer disposed on the first recording layer; and a second blocking layer disposed on the second recording layer so as to be between the second recording layer and the second electrode.
 4. The phase change memory cell of claim 3, wherein the first and second blocking layers are metallic or alloy layers or metallic compounds.
 5. A phase change memory cell, comprising: a first electrode and a second electrode, wherein the first electrode is a single metallic or alloy layer or a metallic compound; a first recording layer disposed between the first and second electrodes; a second recording layer disposed between the first and second electrodes and over the first recording layer; a first heating plug disposed between the first recording layer and the first electrode and contacting the first recording layer; and a second heating plug disposed between the first recording layer and the second recording layer and contacting the second recording layer, wherein: a total contact surface between the second heating plug and the second recording layer is smaller than a bottom surface of the second recording layer; the first heating plug and the second heating plug allow flowing a programming current through the first recording layer and the second recording layer; and a total contact area between the first heating plug and the first recording layer is smaller than a total contact area between the second heating plug and the second recording layer, wherein the total contact area between the first heating plug and the first recording layer is a portion of a bottom surface of the first recording layer.
 6. The phase change memory cell of claim 5, wherein the recording layers are formed of the same material.
 7. The phase change memory cell of claim 5, further comprising: a first blocking layer disposed on the first recording layer; and a second blocking layer disposed on the second recording layer so as to be between the second recording layer and the second electrode.
 8. The phase change memory cell of claim 7, wherein the first and second blocking layers are metallic or alloy layers or metallic compounds. 